According to a report from the UK's Nature magazine website on July 25 (Beijing time), chip maker Intel Corp. said it will invest US$4.1 billion in Asmars, a Dutch-based semiconductor equipment manufacturer, of which US$1 billion will be used exclusively for With the development of extreme ultraviolet (EUV) lithography technology, new technologies are expected to reduce the transistor size to 1/4.
The number of transistors a chip can hold can be doubled every few years, but this trend seems to have reached a dead end. One of the solutions is to use EUV lithography to etch smaller transistors on the microchip, that is, to use ultra-short wavelength light to make 4 times finer patterns than current on existing microchips. The integrated circuit pattern on the chip is made by shining light through a shield on a silicon wafer coated with photoresist. At present, only 22nm can be fabricated using deep ultraviolet (wavelength is generally about 193nm) lithography. Wide minimal pattern.
The only way to etch smaller patterns on a chip is to use shorter wavelength light waves. By shortening the wavelength to 13.5 nm, the pattern on the chip can be reduced to 5 nm or less. To do this, EUV lithography faces chemical, physical, and engineering challenges that require rethinking of the optics, photoresists, masks, and light sources behind the lithography system. In view of this, Intel Corporation announced that it invested 4.1 billion US dollars to accelerate the development of 450mm wafer technology and EUV lithography technology and promote the progress of silicon semiconductor technology.
Almost all materials, including air, absorb light with wavelengths as short as 13.5 nm. Therefore, this process needs to be performed in a vacuum. And because this light cannot be guided by conventional mirrors and lenses, and special mirrors need to be separately manufactured, even these special reflectors absorb a lot of EUV light, so the light must be very bright. The researchers explained that the darker the light, the longer it takes to solidify the photoresist, and because lithography is the slowest step in the microchip manufacturing process, the strength of the EUV light source is critical to reducing costs. The first-generation EUV light source can only provide about 10 watts of light, and only 1 hour is enough to make patterns on 10 silicon wafers. The commercial system must reach 200 watts and make at least 100 patterns in one hour.
Another challenge is that current circuits are generally etched on 300-nm-wide silicon wafers, but Intel Corp. hopes that EUV technology can be performed on 450-nm-wide silicon wafers, so that the number of circuits made at a time can be doubled. Asmael needs to develop new manufacturing equipment. Intel hopes to do this in 2016. (Liu Xia)
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