Great achievements have been made in the research of metal transistors in Beijing University

Recently, the research group Lu Jing of the School of Physics of Peking University has made important progress in the research of all-metal transistors. The related work was titled " All-metallic Vertical Transistors Based on Stacked Dirac Materials, " and it was published online in the top journal of materials science "Advanced Functional Materials". [ Adv. Funct. Mater. (2014) , DOI: 10.1002/adfm.201402904 ].

Since the improvement of the performance of silicon-based semiconductors is tending to their physical limits, the use of metals instead of semiconductors as the channel material of field effect transistors has always been the pursuit of people. All-metal FETs can operate at shorter channel lengths with lower energy loss and have better high frequency performance. Dirac's graphene, silylene, and pinene all have ultra-thin single-atom layer thicknesses and extremely high electron mobility, and they have great potential for high-speed electronic devices. However, their energy gap is zero, and the resulting transistor has a low value (10 or so ) despite having a certain switching ratio . Any logic device that can successfully replace silicon-based CMOS transistors must have a switching ratio of up to 104 to 107 , which requires the device to have a transmission energy gap greater than 0.4 eV. However, the conventional open-gap solution has a smaller energy gap (<0.3 eV) and the current switching ratio of the corresponding device is only 1000 or less. Lu Ji's research group found that due to the energy momentum mismatch in vertical heterogeneous Dirac materials, electrons transported from one Dirac material to another Dirac material near the Fermi surface are forbidden without the help of phonons. . Although the vertical heterogeneous Dirac material itself is all-metal, a transmission energy gap greater than 0.4 eV can be observed in its single-gate FET , and the on-off ratio is as high as 107 . Such a peculiar property is not affected by the relative rotation of the heterogeneous material and can also be extended to homogenous two-layer rotating graphene. This theory provides a new way to realize all-metal high-performance field effect tubes based on Dirac material.

The first author of the above paper is Wang Yangyang, a doctoral student jointly trained by the School of Physics of Peking University and the Massachusetts Institute of Technology. He is currently engaged in research at MIT. Co-authors include Yu Dapeng, Shi Junjie, Yang Jinbo and Professor Li Ju from the Massachusetts Institute of Technology.

Silylene always grows on a certain substrate. It is a matter of concern that the Silarene cones grown on the substrate exist. Lu Ji's research group studied the electronic structure of the interface between silylene and a series of metal substrates, and revealed that the Dirac cone of silylene was completely destroyed due to the strong energy mixture with the substrate. At the same time, they proposed a solution for recovering the Diethyl Dirac cone: an alkali metal is inserted between the siliconene and the metal substrate. Alkali metal atoms in the interlayer weaken the interaction of the siliconene with the substrate, and the alkali metal itself has less influence on the Dirac cone of the siliconene, so that its Dirac cone is recovered. Related work was recently published in Scientific Reports [ Sci. Rep. 4, 5476 (2014) , DOI: 10.1038/srep05476 ] entitled "Don't The Dirac Cone Exist in Silicene on Metal Substrates? ". The first author of this paper is Ph.D. Qu Qi Ruge, a doctoral student jointly trained by the Institute of Frontier Interdisciplinary Studies and Physics of Peking University and the Zurich Senior Engineer of Zurich, Switzerland.

The above research work was supported by the National Natural Science Foundation of China, the National Major Research Program, the State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, and the Collaborative Innovation Center for Quantum Material Science.


These Gloves are ideal for cooking baking and barbequing Hear Resistant Gloves Made of food grade premium silicone with cloth lining for optimal heat resistance

Material Made of heavy industrial grade silicone that is easy to clean and is made of FDA approved BPA FREE premium silicone with soft quilted cotton interior

Heat Protection Gloves and potholder are heat resistant for u to 450 degrees Fahrenheit making it ideal for baking BBQing and more

Easy Care Easy to clean and store is just one of the great features of this set

Silicone+Cotton Gloves

Silicone Gloves,Cotton Gloves,Silicone Cotton Gloves

BOHAO ENTERPRISE CO., LTD , https://www.yj-bohao.com