The team led by Shen Dezhen, a researcher of the State Key Laboratory of Luminescence and Applications at the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, has made progress in the research of Group II oxide laser materials and devices. The relevant achievements have won the 2015 Natural Science Award of Jilin Province. .
The oxide II represented by zinc oxide is a wide bandgap semiconductor, and its exciton binding energy is large, and it is expected to realize a low-threshold ultraviolet semiconductor laser, which has potential applications in the fields of secure communication, precision processing, and the like, thus becoming an international in recent years. Leading and hot topics in the semiconductor field. However, although many years of research have been conducted, experimentally, stimulated emission phenomena have been observed in zinc oxide thin films, nanostructures, and powders. Most of the reports are based on the results of optical excitation, and more promising electric pump stimulation. Launching is facing daunting challenges. In addition to a series of problems such as high acceptor dopant formation energy, large ionization energy, and severe compensation, Group II oxide impurity control and its optoelectronic devices are considered to be an international problem.
Shen Dezhen led the scientific research team to avoid difficulties and researched more than 10 years in Group II oxide photoelectron materials and devices. He proposed many innovative methods in terms of material growth, physical property control, and device design, and discovered several realizations of II New mechanisms and new laws of oxide lasers have brought forth new ideas and new methods, including the regulation of carrier transport by the dielectric layer, and the combination of hole and electron emission by collisional ionization, which have solved the development of such materials and the application of devices. The series of core challenges achieved the first exciton-based electroluminescent device, the first ZnO-based avalanche detector, and the innovative results of Group II oxide ultra-low threshold laser and electric pump-random lasing. He has published more than 400 SCI academic papers in this field and was cited more than 6,200 times by SCI. His research work has received extensive attention and positive evaluation from domestic and foreign counterparts and has been repeatedly cited by international journals such as Nature Photonics, Nature Nanotechnology, and Physics Reports. Commentary, and included in authoritative manuals in the field.
Hydroxylamine Sulfate Basic Information
Product Name: Hydroxylamine sulfate
CAS: 10039-54-0
MF: H2O4S.2H3NO
MW: 164.14
EINECS: 233-118-8
Mol File: 10039-54-0.mol
Hydroxylamine Sulfate Chemical Properties
Melting point: 170 °C (dec.)(lit.)
Boiling point: 56.5℃
Density: 1.86
Storage temp.: -20°C
Solubility water: soluble(lit.)
Form: Crystals
Color: White
PH: 3.6 (10g/l, H2O, 20℃)
Water Solubility: 329 g/L (20 ºC)
Sensitive: Hygroscopic
Hydroxylamine Sulphate CAS No.10039-54-0
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